Controlling domain wall nucleation and injection through focussed ion beam irradiation in perpendicularly magnetized nanowires

Reversal mechanisms in perpendicularly magnetized nanostructures

We demonstrate that magnetic reversal in perpendicularly magnetized nanostructures is highly dependent on the nature and condition of the edges. To understand the impact of edge damage, we compare nanostructures created by ion milling to those prepared on prepatterned substrates. The sizeand temperature-dependent reversal properties of 25 nm–1 m diameter nanodots show that reversal in prepatter...

Determination of the spin torque non-adiabaticity in perpendicularly magnetized nanowires.

Novel nanofabrication methods and the discovery of an efficient manipulation of local magnetization based on spin polarized currents has generated a tremendous interest in the field of spintronics. The search for materials allowing for fast domain wall dynamics requires fundamental research into the effects involved (Oersted fields, adiabatic and non-adiabatic spin torque, Joule heating) and po...

Domain wall motion in nanowires

We investigated the motion of domain walls in ferromagnetic cylindrical nanowires by solving the Landau Lifshitz Gilbert equation numerically for a classical spin model in which energy contributions from exchange, crystalline anisotropy, dipole dipole interactions, and a driving magnetic field are considered. Depending on the diameter, either transverse domain walls or vortex walls are found. A...

Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing.

In this article we detail the application of electron microscopy to visualise discrete structural transitions incurring in single crystalline Ge nanowires upon Ga-ion irradiation and subsequent thermal annealing. Sequences of images for nanowires of varying diameters subjected to an incremental increase of the Ga-ion dose were obtained. Intricate transformations dictated by a nanowire's geometr...